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Intel Accelerating 32nm Development and Product Introductions
In January, DailyTech reported on Intel's Q4 results. During a conference call that we were a part of, Intel's President Paul Otellini repeatedly stated his commitment to the 32nm development process.
Today, DailyTech has learned that Intel's P1268 32nmdevelopment process is proceeding much faster than expected. Intel istherefore announcing an accelerated product ramp, and will beintroducing Westmere-based mobile and desktop processors inthe fourth quarter of 2009, with volume possible in time for theChristmas shopping season.
Intel is spending $7 billion over the next two years on equipment for32nm. For all of 2009, Intel plans to spend $5.4 billion on Researchand Development across all product lines.
Fab D1D, Intel's 300mm development fab in Hillsboro, Oregon, will bethe prototype line, just like for the 45nm process. Over the next sixmonths, this unique factory will turn the 32nm process from theresearch phase into the production phase. It will be in Hillsboro thatIntel will adjust the production line to meet its yield and costrequirements. Once the process has been refined enough, Intel can usethe lessons learned to convert other fabs to the 32nm process.
D1D is already outfitted with 32nm equipment, and yields so far aregood. D1C and AFO (Aloha Factory Operations), also in Oregon, will rampup in the fourth quarter of this year.
Intel's "Megafab", Fab 32 in Chandler, Arizona, will start 32nmproduction in early 2010, followed by Fab 11X in Rio Rancho, New Mexico.
Fab32 was Intel's first high volume 45nm microprocessor Fab. Theyspent $3 billion on a brand new building and the latest equipment toproduce 45nm chips with hafnium-based high-k metal gate transistors,all on a 300mm wafer line. It first opened in 2007, with 184,000 squarefeet of clean room space. The completed Fab 32 structure measures 1million square feet.
DailyTech will be presenting details of Intel's 32nm product roadmap later today.
Intel将在未来的两年投资70亿刀建设晶圆厂,并将投资54亿刀用于产品的研发。
Intel俄勒冈州D1D工厂已经准备好投产,临近的D1C也会在第四季度投产,而亚利桑那州Fab 32和新墨西哥州Fab 11X将在2010年早期陆续投产。
Intel将在32nm采用浸润式光刻和第二代High-K、Metal-Gate技术。 |
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