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Llano APU (tweaked K10h+GPU):
32nm HKMG SOI process.
11 metal layers ,dual strain liners, eSiGe ,low K dielectric.
35 million transistors and 9.69mm^2 (core without L2).
110 million transistors and 17.7mm^2 (core with L2 and power gating ring).
Llano APU(由K10h+GPU组成):
32nm HKMG SOI工艺。
11层金属互联层,双应变衬底,嵌入式硅锗,low K电介质。
3500万晶体管,9.69mm^2的面积(不含L2的核心)。
1.1亿晶体管,17.7mm^2的面积(包含L2和power gating ring的核心)。
Performance improvements:
1.Instruction window is enlarged to 84 entries.
2.Instruction scheduler enlarged to 30 entries for Integer.
3.Instruction set is cleaned up (added AVX support?).
4.L1 cache cell 8T design for low voltage and good scaling.
5.L2 cache up to 1MB, 16-way associativity.
6.Improved hardware integer divide.
7.Reduced latency for FP instructions.
8.Better prefetcher.
9.Faster cache lines transition between states.
10.Increased memory fill speed.
11.TLB improved for better residency.
性能改进:
1、指令窗口扩大到84项。
2、整数的指令调度扩大到30项。
3、清理指令集(增加AVX支持?)
4、为了低电压和可扩展性,L1缓存单元采用8T设计。
5、L2缓存1MB,16路关联。
6、改进硬件正数除法。
7、减少浮点指令延时。
8、更好的预取。
9、更快的缓存行之间转换。
10、增加内存填充速度。
11、改进TLB排列。
Power improvements:
1.Core Power Gating.
-added power gating ring bulid on NFET transistors
-ability to completely disconnect any one of the cores
-multiple power planes
2.Digital APM Module.
-digital monitoring amperage and temperature
-turbo functionality
3.Clock grid
-depopulated and power aware clock grid design
-80% reduction in clock grid metal capacitance
-50% reduciion in the number of power buffers
-2x reduction in clock switching power
功耗改进:
1、核心功率门控。
-增加基于NFET晶体管的power gating ring。
-能够完全断开任何一个核心
-多个电源层
2、数字APM模块。
-数字监控电流和温度
-turbo功能
3、时钟网格。
-减少并增强确定时钟网格的设计
-减少时钟网格上80%的金属电容
-减少50%的电源缓冲
-减少时钟开关上2倍的电源 |
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