AMD and IBM promise more performance for 45 nm processors
San Francisco (CA) - AMD and IBM presented first details of its 45 nm production process at the International Electron Device Meeting (IEDM) today. While practical data for the consumer remains scarce, the two companies indicated that their production approach will bring performance improvements of about 15%.
The addition of ultra-low-K interconnect provides a 15 per cent reduction in wiring-related delay as compared to conventional low-K dielectrics. :p
不过还有一句话比65nm还放卫星w00t)
In spite of the increased packing density of the 45nm generation transistors, IBM and AMD have demonstrated an 80 per cent increase in p-channel transistor drive current and a 24 per cent increase in n-channel transistor drive current compared to unstrained transistors. This achievement results in the highest CMOS performance reported to date in a 45nm process technology.